Electromagnetic Simulation Of Cmos On-Chip Spiral Inductors In 5 Ghz Band

2019 IEEE INTERNATIONAL SYMPOSIUM ON ANTENNAS AND PROPAGATION AND USNC-URSI RADIO SCIENCE MEETING(2019)

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摘要
Complementary metal oxide semiconductor (CMOS) circuits became applicable to radio frequency (RF) bands in the advanced CMOS process technology. On-chip spiral inductors are key component to obtain high performance RF circuits. Electromagnetic simulation of the on-chip spiral inductors is very important for systematic design and improving performance. Electromagnetic simulation of a 2 nH spiral inductor in 5 GHz band is performed. Modeling of the CMOS substrate was key issue for proper simulation. The agreement between measurement and simulation was very good.
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关键词
spiral inductor, on-chip, electromagnetic simulation, CMOS, well, RF pads
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