Detection Performance Of Lt-Gaas-On-Silicon Bowtie Photoconductive Antenna Prototype

2019 44TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ)（2019）

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摘要

Bowtie photoconductive antennas (PCAs) with a 10-mu m gap were fabricated on epitaxial grown LT-GaAs layers on Silicon substrates (LT-GaAs-on-Si). The samples used were grown with distinct growth parameters. The performance of the PCAs as terahertz detectors are presented in this report.

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关键词

terahertz detectors,epitaxial grown LT-GaAs layers,LT-GaAs-on-Si,Silicon substrates,LT-GaAs-on-Silicon bowtie photoconductive antenna prototype,detection performance,Si,GaAs

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