Terahertz Generation In Gallium Nitride Quantum Wells
2019 44TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ)（2019）
摘要
Terahertz emission spectroscopy was used to characterize InGaN/GaN and GaN/AlGaN quantum well structures grown along the polar c-axis and investigate the role of the built-in electrostatic fields in the generation of terahertz radiation. The fields were first calculated using a self-consistent k.p solver and compared to the magnitudes of the transient electric fields generated when the structures were excited in reflection geometry with femtosecond laser pulses.
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关键词
gallium nitride quantum wells,terahertz emission spectroscopy,built-in electrostatic fields,terahertz radiation generation,transient electric field generation,GaN/AlGaN quantum well structures,InGaN/GaN quantum well structures,self-consistent k*p solver,reflection geometry,femtosecond laser pulses,InGaN-GaN,GaN-AlGaN
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