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Response of Waveguide-Integrated Germanium-on-Silicon p-i-n Photodiodes to Neutron Displacement Damage

Patrick S. Goley,Nathaniel A. Dodds,Milad Frounchi,George N. Tzintzarov,R. Nathan Nowlin,John D. Cressler

IEEE Transactions on Nuclear Science（2020）

Cited 8|Views15
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Abstract
The effects of 14-MeV neutron displacement damage (DD) on waveguide (WG)-integrated germanium-on-silicon p-i-n photodiodes (PDs) for silicon photonics have been investigated up to the fluences of 7.5 × 1012 n/cm2 (14 MeV) or 1.4 × 1013 n1-MeVeq/cm2(Si). This article includes the measurements of dark current-voltage characteristics across temperature from 150 to 375 K, measurements of PD junction c...
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Temperature measurement,Frequency measurement,Optical waveguides,Semiconductor device measurement,Current measurement,Capacitance measurement,Integrated optics
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