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Influence of proton irradiation on carrier mobility in InN epitaxial layers

Algirdas Mekys,Jonas Jurkevičius,Arūnas Kadys,Marek Kolenda,Vitalij Kovalevskij,Gintautas Tamulaitis

Thin Solid Films（2019）

Cited 3|Views10
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Abstract
•Influence of irradiation by 1.4 MeV protons dominant in space on InN is studied.•Double-layer model is sufficient to describe irradiation-induced defects.•Matching Hall and magnetoresistivity measurements is productive to characterize InN.•Efficiency of forming ionized impurities in InN decreases with proton fluence.
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Key words
Indium nitride,Hall mobility,Proton irradiation
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