Towards Surface Leakage Free High Fill-Factor Extended Wavelength InGaAs Focal-Plane Arrays

By incorporating of a combined mesa cleaning of SF6 plasma bombarding and HCl rinsing prior to the SiNx passivation, an ultra-low dark current density of 9.1 nA/cm2 at 180 K under a reverse bias of -10 mV for 30 μm pitch In0.83Ga0.17As focal plane arrays (FPAs) with an extended cutoff wavelength of 2.6 μm has been achieved. Six times higher dynamic differential resistance-area product of 35 Ω · cm...