Characterization of top-gate MoS 2 MOSFETs with PEALD-ZrO 2 gate dielectricWenhsin Chang, Naoya Okada,Hidehiro Asai,Koichi Fukuda,Mitsuhiro Okada,Takahiko Endo,Yasumitsu Miyata,Toshifumi IrisawaThe Japan Society of Applied Physics(2019)引用 23|浏览11暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要