Correction: Interface-engineered reliable HfO2-based RRAM for synaptic simulation

Qiang Wang,Gang Niu,Sourav Roy,Yankun Wang,Yijun Zhang,Heping Wu,Shijie Zhai,Wei Bai,Peng Shi,Sannian Song,Zhitang Song,Ya-Hong Xie,Zuo-Guang Ye,Christian Wenger,Xiangjian Meng,Wei Ren

JOURNAL OF MATERIALS CHEMISTRY C（2019）

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摘要

Correction for ‘Interface-engineered reliable HfO2-based RRAM for synaptic simulation’ by Qiang Wang et al., J. Mater. Chem. C, 2019, DOI: 10.1039/c9tc04880d.

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关键词

rram,synaptic,interface-engineered

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