Si substrates playing two opposing roles in the process of preparing graphene by PECVD

Applied Surface Science(2020)

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摘要
•The preparing graphene on silicon substrates was realized due to the sheath.•The textured silicon disturbed its sheath and made it prior for graphene nucleation.•Different sheaths cause enhancement and inhibition of graphene growing on two sides.
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关键词
Graphene,Controllable growth,PECVD,Sheath electric field,Polarization
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