Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes

Materials Today Energy(2019)

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摘要
The use of ultra-wide bandgap transparent conducting beta gallium oxide (β-Ga2O3) thin films as electrodes in ferroelectric solar cells is reported. In a new material structure for energy applications, we report a solar cell structure (a light absorber sandwiched in between two electrodes - one of them - transparent) which is not constrained by the Shockley–Queisser limit for open-circuit voltage (Voc) under typical indoor light. The solar blindness of the electrode enables a record-breaking bulk photovoltaic effect (BPE) with white light illumination (general use indoor light). This work opens up the perspective of ferroelectric photovoltaics which are not subject to the Shockley-Queisser limit by bringing into scene solar-blind conducting oxides.
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关键词
Ultra-wide bandgap semiconductors,Transparent conducting oxide,Gallium oxide,Ga2O3,Ferroelectric photovoltaics,Pb(Zr,Ti)O3,Bulk photovoltaic effect,Solar cell architecture
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