Gate stimulated high-performance MoS 2 -In(OH) x Se phototransistor.

Two-dimensional (2D) materials such as graphene and MoS have shown great potential in photodetection platforms. Photoresponsivity and photoresponse speed are two important parameters illustrating photodetector performances. Although various hybrid structures have been designed, the trade-off between photoresponsivity and photoresponse speed has not been well balanced. In this work, MoS film and In(OH) Se nanoparticles are combined together to form the hybrid phototransistor. Utilizing both the photoconducting and photogating effects, the photoresponsivity increases about one order of magnitude with a value of 10 A W. The ratio of photocurrent and dark current increases to a value of 10. Considering the slow photo recovery speed, a 2 ms gate voltage pulse is applied after turning off the light, which results in a complete recovery of current. The photoconducting effect, photogating effect and gate voltage stimulation simultaneously promote the superior comprehensive photoresponse performances. This method can be further explored and utilized for realizing high performance photodetectors.