Gallium Indium Phosphide Microstructures With Suppressed Photoluminescence For Applications In Nonlinear Optics

Gallium indium phosphide (Ga0.51In0.49P), lattice matched to gallium arsenide, shows remarkable second-order nonlinear properties, as well as strong photoluminescence (PL) due to its direct band gap. By measuring the second-harmonic generation from the GaInP microwave-guide (0.2 x 11 x 1300 mu m) before and after stimulating intrinsic photobleaching, we demonstrate that the PL could be strongly suppressed (-34 dB), leaving the nonlinear properties unchanged, making it suitable for low-noise applications. (C) 2019 Optical Society of America