Ge Devices: A Potential Candidate for Sub-5-nm Nodes?
IEEE Transactions on Electron Devices(2019)
摘要
In this article, we explore different device and standard cell architectures for scaling the Germanium fin field-effect transistor (FinFET) and nanosheet (NS) at the sub-5-nm node. It is demonstrated that the Germanium device provides approximately 70% improvement in drive current and
$3.4\times $
less device resistance. The main concern for Germanium devices remains the high leakage current due to the gate-induced drain leakage, which limits their usage to high-speed applications. Overall, Germanium devices require fewer boosters than silicon to scale beyond the 5-nm node. Contact resistivity is found to be a critical knob for Germanium and it can be relaxed to 3e
$- 9\,\,\Omega $
-cm
2
to meet the power and performance targets for the sub-5-nm node. Moving to the NS helps in relaxing this constraint further.
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关键词
Germanium,Computer architecture,Silicon,Microprocessors,Resistance,Performance evaluation,Standards
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