Photoluminescence and photoelectric properties of CdTe crystals doped with Mo

The low-temperature photoluminescence (PL) and photodiffusion current (PDC) spectra of CdTe crystals doped with Mo atoms of different impurity concentrations N = (1018-1020) cm−3 were studied. It was shown that the most intense PL band for the crystal with N = 1018 cm−3 is caused by the recombination of free electrons and acceptor centers associated with a cadmium vacancy as well as Cu, Na or Li residual impurities. An increase in the concentration of Mo atoms up to N = 1019 cm−3 results in a significant decrease in cadmium vacancies and increase of optical quality of the crystals. Here, PL spectrum contains only the A1oX-line. An increase in the concentration of Mo atoms (N = 1020 cm−3) causes a decrease in optical quality that may be due to the formation of MoTe2 compound in CdTe crystal. The results of the PDC measurements are in accordance with the data of PL studies of CdTe:Mo crystals.