Highly (400) preferential ITO thin film prepared by DC sputtering with excellent conductivity and infrared reflectivity

ITO (Indium Tin Oxide) thin film with a sandwich structure that comprises two layers of oxygen-poor layer and an oxygen-rich layer was deposited on glass substrates by DC sputtering using a ceramic target. The effect of structure on the photoelectric properties of the ITO thin film was investigated. The results indicated that the as-prepared ITO film with sandwich structure showed high (4 0 0) preferred orientation. Simultaneously, the ITO thin film with sandwich structure exhibited excellent optoelectronic properties, which has a low resistivity of 1.384 x 10(4) Omega cm, high visible light transmittance of 88.34% and a high IR reflectivity of 88.37%. Excellent optoelectronic properties can meet the infrared stealth requirements for aircraft windows. (C) 2019 Published by Elsevier B.V.