High element integration in logical and memory matrices of neuroprocessor by applying composite memristor-diode crossbar
INTERNATIONAL JOURNAL OF NANOTECHNOLOGY(2019)
摘要
The industrial nanotechnology of fabrication of two variants of composite memristor crossbar with Zener diodes in a vacuum magnetron device and construction principles of ultra-large 3D memory and logical matrices are suggested. The topologies of the matrices with high element integration are presented.
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关键词
neuroprocessor,logical and memory matrices,memristor-diode crossbar
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