Investigation of layer number effects on the electrical properties of strained multi-layer MoS 2

In this paper, the effects of layer number on the electronic bandstructure and electron mobility of strained multi-layer MoS 2 have been investigated. Ab initio simulations are utilized to investigate the bandstructure of multi-layer MoS 2 , and its low-field mobility has been calculated by the linearized Boltzmann transport equation. The results indicate that tensile strain increases the electron mobility of multi-layer MoS 2 , and this increment is proportional to layer number. Increasing the layer number decreases the mobility of MoS 2 , but application of strain and also increasing the impurity concentration reduces the dependence of mobility on the layer number. It is expected that the calculated mobility for a larger number of layers (beyond 4) reaches the bulk mobility.