Development of two-layered ReRAM using Ga-Sn-O thin film

Ayata Kurasaki,Sumio Sugiski,Ryo Tanaka,Tokiyoshi Matsuda,Mutsumi Kimura

2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)（2019）

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摘要

We have studied Resistive Random Access Memory (ReRAM) using Ga-Sn-O (GTO) thin film. The device fabricated in this study has a sandwich structure in which two layers of GTO thin films with different resistance values are sandwiched between electrodes. From the current-voltage characteristics of the fabricated device, it was possible to confirm the function as memory even if writing and erasing are repeated 400 times.

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关键词

two-layered ReRAM,Resistive Random Access Memory,sandwich structure,GTO thin films,current-voltage characteristics,GaSnO

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