Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al2O3 Substrate
Semiconductors(2019)
Abstract
A GaAs/AlAs/GaAs/AlAs/Ge heterostructure grown on a Si/Al2O3(1
$$\bar {1}$$
02) substrate is formed and studied. The Ge buffer layer is produced by the “hot wire” technique, whereas the III–V layers are grown by metal–organic vapor-phase epitaxy. The optical quality of the III–V layers is determined by photoluminescence spectroscopy. Structural studies are performed by high-resolution transmission electron microscopy. The elemental composition is determined by energy-dispersive X-ray spectroscopy. In the study, the possibility of growing a single-crystal GaAs layer on a Si/Al2O3 substrate through AlAs/GaAs/AlAs/Ge buffer layers is shown.
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Key words
heteroepitaxy, transmission electron microscopy, sapphire substrate, GaAs layer, photoluminescence spectra
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