X-Band Nmos And Cmos Cross-Coupled Dco'S With A "Folded" Common-Mode Resonator Exhibiting 188.5 Dbc/Hz Fom With 29.5% Tuning Range In 16-Nm Cmos Finfet

2019 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC)(2019)

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Abstract
This paper presents two X-band state of the art digitally controlled oscillators (DCO's), one utilizes CMOS and the other NMOS as cross-coupled pairs. Both designs include a "folded" common-mode resonator in order to enhance performance while minimizing the required area. The implemented DCO's cover 9 to 12.1 GHz and 9.3 to 12.4 GHz for the NMOS and CMOS designs respectively, achieving a frequency tuning range (FTR) of 29.5%. Measured phase noise referred to 6.1 GHz and at 1 MHz offset is -118.5 and-114 dBc/Hz for NMOS and CMOS respectively. The NMOS design consumes 3.6 mW while the CMOS design consumes 1.1 mW both from a 0.8 V supply, obtained figure of merit (FoM) for both designs is higher than 188.5 dBc/Hz. Both designs are very compact with an area less than 0.054 mm2.
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Key words
DCO, low-power, phase-noise, CMOS, FoM, common-mode resonance, quality factor
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