Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors

T. V. Malin,D. S. Milakhin,I. A. Aleksandrov,V. E. Zemlyakov,V. I. Egorkin, A. A. Zaitsev,D. Yu. Protasov,A. S. Kozhukhov,B. Ya. Ber,D. Yu. Kazantsev,V. G. Mansurov,K. S. Zhuravlev

Technical Physics Letters（2019）

Cited 5|Views46

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Abstract

It is shown that intentionally undoped high-resistance GaN buffer layers in AlGaN/GaN heterostructures with high electron mobility for transistors can be formed by ammonia molecular beam epitaxy. The GaN growth conditions have been optimized using calculations of the background impurity and point defect concentrations at different ratios of the gallium and ammonia fluxes.

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Key words

GaN,intrinsic point defects,background impurities,AlGaN/GaN,high-electron-mobility transistor,NH3–MBE.

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