Hydride vapor phase epitaxy reactor for bulk GaN growth

A HVPE reactor for growth of bulk GaN epitaxial layers with a diameter of 50 mm was developed. High-capacity external halide precursor sources for gallium, aluminum and boron allow non-stop growth of bulk GaN layers with a thickness of 10 mm and higher. Thin layers of AlN, AlGaN, and BN can be deposited in the same process with bulk GaN growth. A load-lock vacuum chamber and a dry in-situ growth chamber cleaning were implemented to improve the growth process reproducibility. Freestanding GaN crystals with a thickness of 5 mm and a diameter of 50 mm were grown with the reactor.