Organic Light-Emitting Diode Composed Of An Oligomer Crystal Emission Layer

2019 COMPOUND SEMICONDUCTOR WEEK (CSW)(2019)

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摘要
We introduced a crystal of an oligomer material for p-type emission layer into an organic light-emitting diode (OLED), and compared it with the device composed of thin films. To fabricate the devices, we laminated the oligomer crystal or deposited the oligomer thin film on a substrate covered with patterned indium tin oxide electrodes. We completed the devices by depositing an n-type material, an electron injection layer, and an Al electrode. For the current-voltage characteristics, both of the crystal and thin-film devices indicated rectification properties. At a certain current density, estimated applied electric fields for the crystal device was almost a quarter of that for the thin-film device. Both devices showed the current-injected emission. Comparison of the current-injected emission spectra to photoluminescence spectra revealed that the oligomer layers dominated emissions from the devices. The rough estimation of the input power for the current-injected emissions showed the crystal device required the lower input power than the thin-film device. These results suggest an advantage of the crystal device for current injection and light emission.
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关键词
organic light-emitting diode,indium tin oxide electrodes,OLED,rectification properties,photoluminescence spectra,current density,light emission,oligomer layers,current-injected emission spectra,crystal device,thin-film device,current-voltage characteristics,electron injection layer,n-type material,oligomer thin film,p-type emission layer,oligomer material,oligomer crystal emission layer
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