Communication-Potential of the pi-Gate InAs HEMTs for High-Speed and Low-Power Logic Applications

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY(2019)

引用 2|浏览32
暂无评分
摘要
Composite channel (In0.65Ga0.35As/InAs/In0.65Ga0.35As) high electron mobility transistors (HEMTs) with pi-gate structure were investigated for high-speed and low-power logic applications. The conventional and tri-gate MESA HEMTs were compared with the pi-gate device for evaluation. The pi-gate device exhibited the best maximum transconductance value of 1584 mS/mm, on-state current of 332mA/mm, subthreshold swing (SS) of 78.1 mV/decade, and I-ON/I-OFF ratio of 3 x 10(4) at V-DS = 0.5 V at room temperature. These results indicated that the designed pi-gate InAs devices improve the electrical characteristics of InAs HEMTs for high-speed and low-power logic applications. (c) 2019 The Electrochemical Society.
更多
查看译文
关键词
inas,low-power low-power,high-speed
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要