Direct Heteroepitaxy of Orientation-Patterned GaP on GaAs by Hydride Vapour Phase Epitaxy for Quasi-Phase-Matching Applications
2019 COMPOUND SEMICONDUCTOR WEEK (CSW)(2019)
摘要
Heteroepitaxial growth of orientation-patterned GaP on patterned GaAs template was developed by using hydride vapor phase epitaxy for quasi-phase-matching applications. We present the growth with well-defined periodic boundaries between (001) and (00 1) GaP domains. The GaP layer on planar GaAs was characterized by terahertz time-domain spectroscopy and the conductivity of GaP (0.16 S cm
-1
) was obtained in terahertz range.
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关键词
Hydride vapour phase epitaxy, Orientation patterned GaP on GaAs, Terahertz time-domain spectroscopy
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