Impact of Heat Treatment on a Hetero-Stacked MoS 2 / ${h}$ -BN Field-Effect Transistor

We investigated device properties before and after heat treatment for a hetero-stacked two-dimensional field-effect transistor (FET). In dual-gated monolayer MoS2 FET using a top h-BN layer and bottom SiO2 substrate, careful but harsh heat treatment is implemented in high vacuum at 200 °C for 18 h. Under the top-gate bias sweep, the field-effect mobility increases by ~9 times, and the channel carr...