A Large Dynamic Range Current Sensor Using Magnetic Tunnel Junction on 8” Si process line

D. Y. Wang, I. J. Wang, C. S. Lin, J. W. Su,H. H. Lee, Y. C. Hsin,S. Y. Yang, Y. J. Chang, Y. C. Kuo, Y. H. Su,S. Z. Rahaman, G. L. Chen,S. H. Li, J. H. Wei,K. C. Huang, C. I. Wu

2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)（2019）

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摘要

A large dynamic range magnetic field sensor for the current sensing application was designed and successfully fabricated. In this paper, we had tuned the MTJ film structure, cap layer and devices shape to achieve the good linearity and sensitivity. After choice the suitable magnetic free layer and large aspect ratio MTJ cell design, the linear dynamic range and sensitivity of our TMR sensor are over 300 Oe and 0.07%/Oe respectively.

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关键词

magnetic tunnel junction,dynamic range magnetic field sensor,MTJ film structure,cap layer,cell design,TMR sensor,magnetic free layer,dynamic range current sensor application,MTJ cell design,size 8 inch,Si

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