Ferroelectric Si-doped HfO2 Capacitors for Next-Generation Memories

Ava J. Tan,Zhongwei Zhu,Hwan Sung Choe,Chenming Hu,Sayeef Salahuddin,Alex Yoon

2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)（2019）

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摘要

In this work, we assess the viability of a CMOS-compatible ferroelectric material, silicon-doped hafnium oxide (Si-HfO ₂ ), for future capacitor-based ferroelectric memories by investigating process development, structural/electrical characterization, and memory device benchmarking. Ferroelectric capacitors with iridium electrodes and Si-HfO ₂ thicknesses from 8 nm down to 4 nm are fabricated. The Si-HfO ₂ layer is grown by atomic layer deposition (ALD) and subjected to a variety of post-processing annealing conditions. Polarization-voltage (PV) loops are taken to extract ferroelectric parameters such as remanent polarization (PR) and coercive field (Ec), and standard memory tests for fatigue/endurance, retention, and imprint are conducted.

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关键词

ferroelectric silicon-doped hafnium capacitors,structural-electrical characterization,iridium electrodes,ALD,post-processing annealing,remanent polarization,coercive field,fatigue-endurance,standard memory tests,ferroelectric parameters,polarization-voltage loops,post-processing annealing conditions,atomic layer deposition,ferroelectric capacitors,memory device benchmarking,future capacitor-based ferroelectric memories,CMOS-compatible ferroelectric material,next-generation memories,HfO2-Si

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