Core-Shell TFET Developments and TFET Limitations

Tunneling field-effect transistors (TFET) based on a vertical gate-all-around (VGAA) nanowire (NW) architecture with a core-shell (CS) structure have been explored for future CMOS applications. Performance predictions based on a tight-binding mode-space NEGF technique include a drive current Ion of 6.7 μA (NW diameter d = 10.2 nm) at V _dd =0.3 V under low power (LP) conditions (I _off =1 pA) for an InAs/GaSb CS TFET. This compares to Si nMOSFET I _on = 2.3 μA at V _dd =0.55 V(d=6 nm). On the experimental side, scaling of vertical CS NWs resulted in smallest dimensions of d _c = 17 nm (GaSb core) and t _sh =3 nm (InAs shell) for a total diameter of 23 nm. VGAA CS nFETs demonstrated drive current of up to 40 μA (V _d =0.3 V) and subthreshold swing SS=40mV/dec(V _d =10mV) for NW diameters between 35 - 50 nm. Although key TFET properties such as current drive and subthermal SS have been demonstrated using a VGAA CS architecture for the first time, experimental results still lag predictions. An intrinsic relationship between band-to band-tunneling (BTBT) and D _it related trap assisted tunneling (TAT) was found which imposes challenging D _it requirements, in particular for LP I _off specifications. Complexity of fabrication and a material system foreign to CMOS manufacturing further impact prospects of TFET technology.