Direct first-principle-based study of mode-wise in-plane phonon transport in ultrathin silicon films

Qi Wang,Ruiqiang Guo,Cheng Chi,Kai Zhang,Baoling Huang

International Journal of Heat and Mass Transfer（2019）

引用 7|浏览5

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摘要

•The mode-wise in-plane phonon transport properties in ultrathin Si films are directly calculatied by the DFTB method.•The smooth ultrathin Si films own relatively high thermal conductivity (∼30 W/m-K at 300 K).•Atomic-level surface defects can induce 10-fold reduction in thermal conductivity.

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关键词

Mode-wise phonon transport,Ultrathin Si film,Surface defect,First principles

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