High Performance Germanium N(+)/P Shallow Junction For Nano-Scaled N-Mosfet

In this work, we study excimer laser annealing (ELA) on phosphorus-implanted germanium with implantation energies and doses of 30 keV, 5x1015 cm(-2), and 10 keV, 5x10(14) cm(-2), respectively. A lower specific contact resistivity of Al/n(+)Ge and better performance of Ge n(+)/p diode than that obtained by rapid thermal annealing have been fulfilled. Moreover, by a combination of low temperature pre-annealing (LTPA) and ELA, we achieved a Ge n(+)/p diode with a rectification ratio of about 10(7) and decreased phosphorus diffusion in Ge during ELA. A increased activation concentration up to 6x10(19)cm(-3) with a high activation ratio about 85% of phosphorus have been achieved in a low ion implanted dose and energy.