Growth of GeSn/Ge Superlattices by Remote Plasma-Enhanced Chemical Vapor Deposition

Bruce Claflin,Gordon Grzybowski,Arnold Kiefer

2019 IEEE Photonics Society Summer Topical Meeting Series (SUM)（2019）

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摘要

Superlattices of GeSn/Ge were grown at 290 ^ο C on Ge substrates by remote plasma enhanced chemical vapor deposition, using GeH ₄ and SnCl ₄ precursors. The structural and optical properties of these layers were characterized by x-ray diffraction, and room temperature photoluminescence.

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关键词

remote plasma-enhanced chemical vapor deposition,Ge substrates,photoluminescence,semiconductor layer structure,X-ray diffraction,semiconductor superlattice growth,temperature 293.0 K to 298.0 K,temperature 290 degC,Ge,GeSn-Ge

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