Single-Event Effect Hardened VDMOS Device with Hole Bypass Structure

Vertical Double Diffused MOSFETs (VDMOS) are more and more used in the natural radiation environments, such as atmospheric and spacecraft applications. A novel VDMOS structure with a Hole Bypass (HB) structure to enhance the radiation tolerance of Single-Event Effect (SEE) is proposed. It includes a highly doping P-type pillar shorted to the source electrode in the JFET region. The mechanism of the novel structure has been discussed thoroughly, and the simulations demonstrate that the SEE radiation performance of HB-VDMOS is significantly improved compared with the C-VDMOS when the heavy ion strikes at different positions.