Influence of indium-tin-oxide and emitting-layer thicknesses on light outcoupling of perovskite light-emitting diodes

Metal halide perovskite light-emitting diodes (PeLEDs) are emerging as a promising candidate for next-generation optoelectronic devices. The efficiency of PeLEDs has developed explosively in a short time, but their overall efficiency is still low. This is strongly related to the high refractive indexes of indium-tin-oxide (ITO) and perovskite emitting layers. Various outcoupling strategies are being introduced to outcouple the light trapped inside the layers. However, the proposed methods have experimental challenges that need to be overcome for application to large-area electronics. Based on optical simulations, we demonstrate that the thicknesses of the ITO and perovskite layers are key parameters to improve the outcoupling efficiency of PeLEDs. In addition, the optical energy losses of PeLEDs can be reduced significantly by properly adjusting the thicknesses of the two layers. This leads to outstanding optical performance with a maximum EQE greater than 20% without using any other external outcoupling strategies.