Ordered arrays of defect-free GaN nanocolumns with very narrow excitonic emission line width
Journal of Crystal Growth（2019）
Abstract
•Ordered arrays of very high quality, defect-free GaN nanocolumns.•Two step process: etching and overgrowth by Molecular Beam Epitaxy.•Effective filtering of dislocations.•GaN nanocolumns with any trace of extended defects.•Very narrow excitonic emission line width.
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Key words
B1. Nitrides,A3. Molecular beam epitaxy,A1. Etching,A1. Optical microscopy
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