Segregation at interfaces in (GaIn)As/Ga(AsSb)/(GaIn)As- quantum well heterostructures explored by atomic resolution STEM

P. Kükelhan,S. Firoozabadi,A. Beyer,L. Duschek,C. Fuchs,J.O. Oelerich,W. Stolz,K. Volz

Journal of Crystal Growth（2019）

引用 7|浏览17

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摘要

•(GaIn)As/Ga(AsSb)/(GaIn)As heterostructures are candidates for type-II lasers.•Single quantum wells and full heterostructure grown with same conditions by MOVPE.•Composition of quantum well heterostructures is determined with atomic resolution.•Surface segregation in all quantum well heterostructures is quantified.•In and Sb influence each other severely during growth.

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关键词

A1. Characterization,A3. Metalorganic vapour phase epitaxy,A3. Quantum wells,B2. Semiconducting III–V materials,B3. Solid state lasers

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