Self-Allancd Gate Contact (SAGC) for CMOS Technology Scaling Beyond 7Nm
2019 SYMPOSIUM ON VLSI TECHNOLOGY（2019）
关键词
SAGC,CMOS technology scaling,gate contact scheme,superior process integration,SRAM cross-couple wiring,gate-contact,source-drain local interconnect,trapezoid-shaped oxide,source-drain region,growth process,upper level wiring,self-aligned gate contact
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