Preferential out-of-plane conduction and quasi-one-dimensional electronic states in layered van der Waals material 1T-TaS2

npj 2D Materials and Applications(2019)

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摘要
Layered metallic transition-metal dichalcogenides are conventionally seen as two-dimensional conductors, despite a scarcity of systematic studies of the interlayer charge transport conducted in a well-defined geometry. Here, we reveal c-axis-oriented quasi-one-dimensional electronic states in 1T-TaS2, a layered system hosting a plethora of diverse phases, by probing its out-of-plane electrical resistivity using focused-ion-beam-tailored crystals. While the in-plane conduction appears non-metallic due to presence of a unique nanoarray of charge density wave (CDW) domains, the interlayer resistivity has a metallic temperature dependence with the anisotropy close to one, as a result of intertwining of the orbital and CDW orders. The compound is known for what was believed to be a Mott-type localisation below 150 K, yet with our data, supplemented by ab-initio calculations, we interpret the transition as a Peierls-like instability of the quasi-one-dimensional electronic structure. Our findings present a very unintuitive behaviour in a van der Waals crystal.
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关键词
Electronic properties and materials,Phase transitions and critical phenomena,Materials Science,general,Nanotechnology,Surfaces and Interfaces,Thin Films
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