Microconsuming 8–12 GHz GaN Power Amplifiers
Russian Microelectronics（2019）
Abstract
This paper describes a cascade circuit of a gallium nitride (GaN) power amplifier whose chip area is smaller by factors of 4 to 6 than that of traditional amplifiers on silicon carbide (SiC) substrates. It enables an output power of up to 3 W at 8–12 GHz for microconsuming power amplifiers in robotics and spacecraft applications.
MoreTranslated text
Key words
monolithic microwave integrated circuit,power amplifier,AlGaN/AlN/GaN nano-heterostructure,cascaded transistor circuit,microconsuming single-chip transmit/receive modules,gallium nitride,silicon carbide,sapphire,and robotics
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined