Long-term drift of Si-MOS quantum dots with intentional donor implants
SCIENTIFIC REPORTS(2019)
摘要
Charge noise can be detrimental to the operation of quantum dot (QD) based semiconductor qubits. We study the low-frequency charge noise by charge offset drift measurements for Si-MOS devices with intentionally implanted donors near the QDs. We show that the MOS system exhibits non-equilibrium drift characteristics, in the form of transients and discrete jumps, that are not dependent on the properties of the donor implants. The equilibrium charge noise indicates a 1/ f noise dependence, and a noise strength as low as 1 μeV/√(Hz) , comparable to that reported in more model GaAs and Si/SiGe systems (which have also not been implanted). We demonstrate that implanted qubits, therefore, can be fabricated without detrimental effects on long-term drift or 1/ f noise for devices with less than 50 implanted donors near the qubit.
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关键词
Electronic devices,Quantum dots,Quantum information,Science,Humanities and Social Sciences,multidisciplinary
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