Ferroelectric Ordering And Energy Storage Density Of Thin Films Capacitor By Doping La3+ And Sc3+ On Pb(Zr0.53ti0.47)O-3 Using Pulse Laser Deposition Technique

Highly oriented 0.90[PbZr0.53Ti0.47]0.10[La0.80Sc0.20]O3- (PLZTS) thin films deposited on La0.67Sr0.33MnO3 (LSMO) coated MgO (100) substrates were grown by pulsed laser deposition technique. Temperature dependent dielectric measurements on metal-ferroelectric-metal Pt/PLZTS/LSMO thin film capacitors were carried out at several frequencies which exhibit high dielectric constants (450-580) with the diffuse peak around 400K, and the diffusivity parameter was obtained as 1.96 for 100kHz data. The slim polarization-electric field hysteresis loop was observed with less remanent polarization (approximate to 7-10C/cm(2)) indicating its relaxor behavior. Temperature dependent Raman spectra measured between 80 and 550K show softening of the symmetric E(LO2) band that disappeared at 300K, corroborating the tetragonal-cubic phase transition. From the analysis of the measured hysteresis loops, the recovered energy density U-re approximate to 19J/cm(3) with the efficiency approximate to 66% was estimated, suggesting its possible application in energy density capacitors.