A Novel 3300V Trench IGBT with Hole Extraction Structure for Low Power Loss

A novel 3300V Trench IGBT with Hole Extraction Structure (HE-IGBT) is proposed in this paper. The hole extraction is controlled by the JFET structure in the Adjustable Hole Path (AHP) region. The AHP region is in the floating potential during on-state and extracts holes swiftly during the turn-off transition. Meanwhile, the AHP region effectively reduces electric fields under trench gates and shields IGBT gates during switching, contributing to the higher BV and lower Miller capacitance. Based on the theoretical analysis and numerical simulations, the breakdown voltage of HE-IGBT is 10.7% higher than that of the Separate Floating Player IGBT (SFP-IGBT). Furthermore, compared with SFP-IGBT, the proposed device decreases Miller capacitance and switching loss by 67% and 30%, respectively.