Control of temperature distribution to suppress macro-defects in solution growth of 4H-SiC crystals

•Surface damage caused before seeding and roughening by SiC particles were investigated.•Hillocks of 6H-SiC were formed on the seed surface before seeding by vaporized solvent.•The melt-back process completely removed the damaged layer before growth began.•Adhesion of SiC particles on the growth surface introduced surface roughening.•Adhesion of SiC particles was suppressed by control of carbon supersaturation.