Ultra-high speed 7mohm, 650V SiC half-bridge module with robust short circuit capability for EV inverters
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)(2019)
Abstract
Ultra-low RdsA SiC JFET technology is used to realize a 7mohm, 650V Stack Cascode switch, rated at >100A, with very fast switching, and 8us rated short circuit capability that is reported here for the first time. These devices meet all the technical requirements for EV inverters, representing the lowest RdsA and highest short circuit rated contemporary switch technology. The devices are assembled in a high performance, low inductance module to demonstrate extremely low switching losses, making the technology suitable for higher frequency DC-DC applications as well.
MoreTranslated text
Key words
EV,Inverter,SCWT,SiC,Stack Cascode,Module
AI Read Science
Must-Reading Tree
Example
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined