Methodology for Building MPC Model for Advanced Lithography Nodes

In advanced lithography nodes, as design dimensions' shrink, correcting for mask process-induced errors using the traditional mask process corrections methods begin hitting their limit. As the errors become more complex, simple assumptions and corrections such as 1-D differential bias begin to break down. The need for a correction model becomes important to compensate for mask process errors and help improve the yield. Building a mask process correction (MPC) model can impact the turn-around time (TAT) of the mask fabrication, where multiple iterations are needed for an optimized model. In this paper, a methodology on how to build MPC model for advanced lithography nodes will be introduced. It will highlight the best known methods (BKM) for every step needed to build and verify MPC model.