Two-Dimensional Analytical Model Of Algan/Gan Hemts With A Ftched Algan Barrier Layer
international conference on electron devices and solid-state circuits(2019)
摘要
Take complete depletion as example, a two-dimensional analytical model of AlGaN/GaN high-electron mobility transistors (HEMTs) with a etched AIGaN barrier layer is formulated in this paper. Based on Poisson's equation, the off-state channel potential and electric field distributions are achieved. By comparing with the ISE TCAD simulation results, the accuracy of the analytical model is validated and a good consistency is obtained.
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关键词
AlGaN/GaN HEMTs, analytical model, electric field modulation
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