Two-Dimensional Analytical Model Of Algan/Gan Hemts With A Ftched Algan Barrier Layer

Take complete depletion as example, a two-dimensional analytical model of AlGaN/GaN high-electron mobility transistors (HEMTs) with a etched AIGaN barrier layer is formulated in this paper. Based on Poisson's equation, the off-state channel potential and electric field distributions are achieved. By comparing with the ISE TCAD simulation results, the accuracy of the analytical model is validated and a good consistency is obtained.