Nonvolatile Photoelectric Memory Induced by Interfacial Charge at a Ferroelectric PZT‐Gated Black Phosphorus Transistor

Ferroelectric-field-effect-transistor (FeFET) memory, characterized by its nonvolatile, nondestructive readout operation and low power consumption, has attracted tremendous attention in the development of next-generation random-access memory. However, the electrical reading processes in conventional FeFETs may attenuate the ferroelectric (FE) polarization and lead to readout crosstalk. A photoelectric-type FeFET memory with alternative readout through 2D black phosphorus (BP)/lead zirconate titanate (PZT) heterostructures is developed. Based on charge-mediated electric-field control, a unique polarization-dependent photoresponse is observed, resulting in both positive photoconductivity (PPC) and negative photoconductivity (NPC) in a single device element via FE gating. This enables a nonvolatile photoelectric memory working in a novel "electrical writing-optical reading" process mode. Furthermore, the device exhibits a reliable data retention (over 3.6 x 10(3) s) and fatigue (exceeding 500 cycles) performance with extremely low energy consumption (driving voltage <10 mV). The demonstrated BP/PZT heterostructure memory devices show a pathway to high-performance photoelectric storage devices as light-activated logic gates for on-chip optical communications.