Effects of Gate Stack Composition and Thickness in 2-D Negative Capacitance FETs

Yuh-Chen Lin,Felicia McGuire,Steven Noyce,Nicholas Williams,Zhihui Cheng,Joseph Andrews,Aaron D. Franklin

IEEE Journal of the Electron Devices Society（2019）

引用 3|浏览8

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摘要

Negative capacitance (NC) field-effect transistors (FETs) with 2-D semiconducting channels have become increasingly attractive due to their ability to produce sub-60 mV/dec switching behavior in a physically scalable device. However, it has yet to be determined how gate control, including threshold voltage, of 2-D NC-FETs is impacted by gate dielectric composition, along with dielectric and ferroe...

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关键词

Dielectrics,Capacitance,Two dimensional displays,Hafnium compounds,Threshold voltage,Logic gates,Performance evaluation

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