Effective Low Leakage 6T and 8T FinFET SRAMs: Using Cells with Reverse-Biased FinFETs, Near-Threshold Operation, and Power Gating

Power gating is commonly used to reduce leakage current in SRAM memories; leakage current has a large impact on SRAM energy consumption. We first focus on power gating FinFET SRAMs and then evaluate three techniques to reduce the leakage power and energy-delay product (EDP) of sixand eight-transistor (6T, 8T) FinFET SRAM cells. We compare the EDP savings obtained using: 1) power gating FinFETs; 2)...