Enabling STT-MRAM in High Volume Manufacturing for LLC Applications

R. Whig,C. Ching, X. Wang,P. Agrawal,D. Kim,R. Wang, J. Lei, R. Zheng,L. Xue,J. Ahn,H. Tseng, S. Kumar, W. Zhou, E. Budiarto, T. Egan, S. Venkatanarayanan, N. Khasgiwale, W. Chen, C. Zhou,M. Pakala, K. Moraes, X. Tang

2019 IEEE 11th International Memory Workshop (IMW)（2019）

Cited 3|Views7

Key words

magnetic properties,Applied Materials Fndura PVD System,on-board metrology,tunneling magnetoresistance,OBM technology,MTJ stack deposition,precision process control,unit-processes,magnetic tunnel junction stack,optimization,systematic process monitoring,device performance,process complexity,MRAM cell,LLC requirements,Level Cache applications,Spin Transfer Torque Magnetic Random-Access Memory technology,high volume manufacturing,patterned MTJ diameter,perpendicular MTJ,HVM,process throughput,key MRAM layers,MTJ film properties,STT-MRAM,volume production,temperature 400.0 degC,size 40.0 nm,size 88.0 nm,time 5.0 ns,time 3.0 hour

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